NXP USA Inc. - PMDPB95XNE,115

KEY Part #: K6523769

[4055PC Stock]


    Nimewo Pati:
    PMDPB95XNE,115
    Manifakti:
    NXP USA Inc.
    Detaye deskripsyon:
    MOSFET 2N-CH 30V 2.4A HUSON6.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Arrays, Diodes - Rèkteur - Single, Transistors - Objektif espesyal, Diodes - Zener - Single and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
    Avantaj konpetitif:
    We specialize in NXP USA Inc. PMDPB95XNE,115 electronic components. PMDPB95XNE,115 can be shipped within 24 hours after order. If you have any demands for PMDPB95XNE,115, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    PMDPB95XNE,115 Atribi pwodwi yo

    Nimewo Pati : PMDPB95XNE,115
    Manifakti : NXP USA Inc.
    Deskripsyon : MOSFET 2N-CH 30V 2.4A HUSON6
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : 2 N-Channel (Dual)
    Karakteristik FET : Logic Level Gate
    Drenaj nan Voltage Sous (Vdss) : 30V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.4A
    RD sou (Max) @ Id, Vgs : 120 mOhm @ 2A, 4.5V
    Vgs (th) (Max) @ Id : 1.5V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 2.5nC @ 4.5V
    Antre kapasite (Ciss) (Max) @ Vds : 143pF @ 15V
    Pouvwa - Max : 475mW
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake / Ka : 6-UDFN Exposed Pad
    Pake Aparèy Founisè : DFN2020-6