Infineon Technologies - IRL540NLPBF

KEY Part #: K6412011

[13593PC Stock]


    Nimewo Pati:
    IRL540NLPBF
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    MOSFET N-CH 100V 36A TO-262.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Diodes - Bridge rèktifikateur, Tiristors - SCR - Modil yo, Tiristors - DIACs, SIDACs, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays, Transistors - Objektif espesyal and Transistors - Pwogramasyon Unijunction ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies IRL540NLPBF electronic components. IRL540NLPBF can be shipped within 24 hours after order. If you have any demands for IRL540NLPBF, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRL540NLPBF Atribi pwodwi yo

    Nimewo Pati : IRL540NLPBF
    Manifakti : Infineon Technologies
    Deskripsyon : MOSFET N-CH 100V 36A TO-262
    Seri : HEXFET®
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 100V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 36A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 4V, 10V
    RD sou (Max) @ Id, Vgs : 44 mOhm @ 18A, 10V
    Vgs (th) (Max) @ Id : 2V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 74nC @ 5V
    Vgs (Max) : ±16V
    Antre kapasite (Ciss) (Max) @ Vds : 1800pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 3.8W (Ta), 140W (Tc)
    Operating Tanperati : -55°C ~ 175°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : TO-262
    Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA