Diodes Incorporated - ZXMC10A816N8TC

KEY Part #: K6522198

ZXMC10A816N8TC Pricing (USD) [191955PC Stock]

  • 1 pcs$0.19269
  • 2,500 pcs$0.17054

Nimewo Pati:
ZXMC10A816N8TC
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET N/P-CH 100V 2A 8-SOIC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Bridge rèktifikateur, Diodes - Rèkteur - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Single, Modil pouvwa chofè, Transistors - FETs, MOSFETs - Arrays and Tiristors - SCR ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ZXMC10A816N8TC Atribi pwodwi yo

Nimewo Pati : ZXMC10A816N8TC
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET N/P-CH 100V 2A 8-SOIC
Seri : -
Estati Pati : Active
FET Kalite : N and P-Channel
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2A
RD sou (Max) @ Id, Vgs : 230 mOhm @ 1A, 10V
Vgs (th) (Max) @ Id : 2.4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 9.2nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 497pF @ 50V
Pouvwa - Max : 1.8W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè : 8-SOP