NVMFS6B85NLWFT3G Pricing (USD) [13505PC Stock]
- 5,000 pcs$0.19094
- Nimewo Pati:
- NVMFS6B85NLWFT3G
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 100V 5.6A 19A 5DFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Diodes - Rèkteur - Single, Tiristors - TRIACs, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - IGBTs - Modil yo ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor NVMFS6B85NLWFT3G electronic components. NVMFS6B85NLWFT3G can be shipped within 24 hours after order. If you have any demands for NVMFS6B85NLWFT3G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NVMFS6B85NLWFT3G Atribi pwodwi yo
Nimewo Pati :
NVMFS6B85NLWFT3G
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CH 100V 5.6A 19A 5DFN
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5.6A (Ta), 19A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
46 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
7.9nC @ 10V
Vgs (Max) :
±16V
Antre kapasite (Ciss) (Max) @ Vds :
480pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
3.5W (Ta), 42W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
5-DFN (5x6) (8-SOFL)
Pake / Ka :
8-PowerTDFN, 5 Leads
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