[863PC Stock]
- Nimewo Pati:
- TPCA8010-H(TE12LQM
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET N-CH 200V 5.5A SOP-8 ADV.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Tiristors - SCR, Diodes - Rèkteur - Single, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - JFETs, Diodes - Zener - Single and Transistors - Objektif espesyal ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TPCA8010-H(TE12LQM electronic components. TPCA8010-H(TE12LQM can be shipped within 24 hours after order. If you have any demands for TPCA8010-H(TE12LQM, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPCA8010-H(TE12LQM Atribi pwodwi yo
Nimewo Pati :
TPCA8010-H(TE12LQM
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N-CH 200V 5.5A SOP-8 ADV
Seri :
π-MOSV
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
450 mOhm @ 2.7A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
10nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
600pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.6W (Ta), 45W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-SOP Advance (5x5)
Pake / Ka :
8-PowerVDFN
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