IXTT120N15P Pricing (USD) [15411PC Stock]
- 1 pcs$2.95623
- 30 pcs$2.94153
- Nimewo Pati:
- IXTT120N15P
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 150V 120A TO-268.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Arrays, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Modil yo, Diodes - Zener - Arrays, Transistors - JFETs and Diodes - Zener - Single ...
- Avantaj konpetitif:
- We specialize in IXYS IXTT120N15P electronic components. IXTT120N15P can be shipped within 24 hours after order. If you have any demands for IXTT120N15P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTT120N15P Atribi pwodwi yo
Nimewo Pati :
IXTT120N15P
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 150V 120A TO-268
Seri :
PolarHT™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
150V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
120A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
16 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
150nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
4900pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
600W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-268
Pake / Ka :
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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