CSD13381F4 Pricing (USD) [1267227PC Stock]
- 1 pcs$0.02919
- 3,000 pcs$0.02049
- Nimewo Pati:
- CSD13381F4
- Manifakti:
- Texas Instruments
- Detaye deskripsyon:
- MOSFET N-CH 12V 2.1A 3PICOSTAR.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - JFETs, Transistors - IGBTs - Modil yo, Tiristors - SCR - Modil yo, Tiristors - DIACs, SIDACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Single and Tiristors - SCR ...
- Avantaj konpetitif:
- We specialize in Texas Instruments CSD13381F4 electronic components. CSD13381F4 can be shipped within 24 hours after order. If you have any demands for CSD13381F4, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD13381F4 Atribi pwodwi yo
Nimewo Pati :
CSD13381F4
Manifakti :
Texas Instruments
Deskripsyon :
MOSFET N-CH 12V 2.1A 3PICOSTAR
Seri :
NexFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.1A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 4.5V
RD sou (Max) @ Id, Vgs :
180 mOhm @ 500mA, 4.5V
Vgs (th) (Max) @ Id :
1.1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
1.4nC @ 4.5V
Vgs (Max) :
8V
Antre kapasite (Ciss) (Max) @ Vds :
200pF @ 6V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
500mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
3-PICOSTAR
Pake / Ka :
3-XFDFN
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