Diodes Incorporated - DMN63D8LDW-13

KEY Part #: K6522301

DMN63D8LDW-13 Pricing (USD) [2016851PC Stock]

  • 1 pcs$0.01834
  • 10,000 pcs$0.01657

Nimewo Pati:
DMN63D8LDW-13
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET 2N-CH 30V 0.22A SOT363.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Single, Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - RF, Modil pouvwa chofè and Transistors - Pwogramasyon Unijunction ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN63D8LDW-13 Atribi pwodwi yo

Nimewo Pati : DMN63D8LDW-13
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET 2N-CH 30V 0.22A SOT363
Seri : -
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 220mA
RD sou (Max) @ Id, Vgs : 2.8 Ohm @ 250mA, 10V
Vgs (th) (Max) @ Id : 1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 870nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 22pF @ 25V
Pouvwa - Max : 300mW
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 6-TSSOP, SC-88, SOT-363
Pake Aparèy Founisè : SOT-363

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