Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N/P-CH 20V SOT563
FET Kalite :
N and P-Channel
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
870mA, 640mA
RD sou (Max) @ Id, Vgs :
400 mOhm @ 600mA, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
0.74nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
60.67pF @ 16V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
SOT-563, SOT-666
Pake Aparèy Founisè :
SOT-563