[1127PC Stock]
- Nimewo Pati:
- IXTJ36N20
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 200V 36A TO-247AD.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - RF, Tiristors - SCR, Diodes - Zener - Arrays, Transistors - Pwogramasyon Unijunction, Diodes - RF and Tiristors - TRIACs ...
- Avantaj konpetitif:
- We specialize in IXYS IXTJ36N20 electronic components. IXTJ36N20 can be shipped within 24 hours after order. If you have any demands for IXTJ36N20, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTJ36N20 Atribi pwodwi yo
Nimewo Pati :
IXTJ36N20
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 200V 36A TO-247AD
Seri :
HiPerFET™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
36A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
70 mOhm @ 18A, 10V
Vgs (th) (Max) @ Id :
4V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs :
140nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
2970pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
300W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247AD
Pake / Ka :
TO-3P-3 Full Pack
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