Rohm Semiconductor - SP8J3FU6TB

KEY Part #: K6524133

SP8J3FU6TB Pricing (USD) [3933PC Stock]

  • 2,500 pcs$0.20769

Nimewo Pati:
SP8J3FU6TB
Manifakti:
Rohm Semiconductor
Detaye deskripsyon:
MOSFET 2P-CH 30V 3.5A 8SOIC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Single, Tiristors - SCR - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Single and Transistors - JFETs ...
Avantaj konpetitif:
We specialize in Rohm Semiconductor SP8J3FU6TB electronic components. SP8J3FU6TB can be shipped within 24 hours after order. If you have any demands for SP8J3FU6TB, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SP8J3FU6TB Atribi pwodwi yo

Nimewo Pati : SP8J3FU6TB
Manifakti : Rohm Semiconductor
Deskripsyon : MOSFET 2P-CH 30V 3.5A 8SOIC
Seri : -
Estati Pati : Obsolete
FET Kalite : 2 P-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.5A
RD sou (Max) @ Id, Vgs : 90 mOhm @ 3.5A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 5.5nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds : 490pF @ 10V
Pouvwa - Max : 2W
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè : 8-SOP