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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FCP380N60E

ON Semiconductor - FCP380N60E

KEY Part #: K6418762

FCP380N60E Pricing (USD) [76530PC Stock]

  • 1 pcs$0.51091
  • 800 pcs$0.42110
Nimewo Pati:
FCP380N60E
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 600V TO220-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Modil pouvwa chofè, Tiristors - DIACs, SIDACs, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - RF, Diodes - RF, Diodes - Varyab kapasite (Varicaps, Varactors) and Diodes - Rèkteur - Arrays ...
Avantaj konpetitif:
We specialize in ON Semiconductor FCP380N60E electronic components. FCP380N60E can be shipped within 24 hours after order. If you have any demands for FCP380N60E, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FCP380N60E Atribi pwodwi yo

Nimewo Pati : FCP380N60E
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 600V TO220-3
Seri : SuperFET® II
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 10.2A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 380 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 45nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1770pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 106W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220-3
Pake / Ka : TO-220-3

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