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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. NTMS4177PR2G

ON Semiconductor - NTMS4177PR2G

KEY Part #: K6415730

NTMS4177PR2G Pricing (USD) [308600PC Stock]

  • 1 pcs$0.12046
  • 2,500 pcs$0.11986
Nimewo Pati:
NTMS4177PR2G
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET P-CH 30V 6.6A 8-SOIC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - SCR - Modil yo, Transistors - IGBTs - Arrays, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Modil yo, Transistors - IGBTs - Single and Transistors - FETs, MOSFETs - Single ...
Avantaj konpetitif:
We specialize in ON Semiconductor NTMS4177PR2G electronic components. NTMS4177PR2G can be shipped within 24 hours after order. If you have any demands for NTMS4177PR2G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NTMS4177PR2G Atribi pwodwi yo

Nimewo Pati : NTMS4177PR2G
Manifakti : ON Semiconductor
Deskripsyon : MOSFET P-CH 30V 6.6A 8-SOIC
Seri : -
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6.6A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 12 mOhm @ 11.4A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 55nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 3100pF @ 24V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 840mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-SOIC
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)

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