DMN3016LDV-13 Pricing (USD) [326859PC Stock]
- 1 pcs$0.11316
- 3,000 pcs$0.10055
- Nimewo Pati:
- DMN3016LDV-13
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET 2 N-CH 21A POWERDI3333-8.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Modil yo, Transistors - JFETs, Diodes - Zener - Single, Transistors - Objektif espesyal, Diodes - Rèkteur - Single and Diodes - Varyab kapasite (Varicaps, Varactors) ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMN3016LDV-13 electronic components. DMN3016LDV-13 can be shipped within 24 hours after order. If you have any demands for DMN3016LDV-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN3016LDV-13 Atribi pwodwi yo
Nimewo Pati :
DMN3016LDV-13
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET 2 N-CH 21A POWERDI3333-8
Seri :
-
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
-
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
21A (Tc)
RD sou (Max) @ Id, Vgs :
12 mOhm @ 7A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
9.5nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
1184pF @ 15V
Pouvwa - Max :
-
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-PowerVDFN
Pake Aparèy Founisè :
PowerDI3333-8
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