IXFK120N20 Pricing (USD) [4965PC Stock]
- 1 pcs$10.03508
- 10 pcs$9.12145
- 100 pcs$7.37503
- Nimewo Pati:
- IXFK120N20
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 200V 120A TO-264AA.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Diodes - RF, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - RF, Tiristors - DIACs, SIDACs, Transistors - JFETs, Tiristors - SCR - Modil yo and Transistors - Bipolè (BJT) - Single ...
- Avantaj konpetitif:
- We specialize in IXYS IXFK120N20 electronic components. IXFK120N20 can be shipped within 24 hours after order. If you have any demands for IXFK120N20, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFK120N20 Atribi pwodwi yo
Nimewo Pati :
IXFK120N20
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 200V 120A TO-264AA
Seri :
HiPerFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
120A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
17 mOhm @ 60A, 10V
Vgs (th) (Max) @ Id :
4V @ 8mA
Chaje Gate (Qg) (Max) @ Vgs :
300nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
9100pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
560W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-264AA (IXFK)
Pake / Ka :
TO-264-3, TO-264AA
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