Nexperia USA Inc. - PMPB20XPE,115

KEY Part #: K6421415

PMPB20XPE,115 Pricing (USD) [532793PC Stock]

  • 1 pcs$0.06942
  • 3,000 pcs$0.06102

Nimewo Pati:
PMPB20XPE,115
Manifakti:
Nexperia USA Inc.
Detaye deskripsyon:
MOSFET P-CH 20V 7.2A SOT1220.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Single, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Arrays, Diodes - Rèkteur - Single, Tiristors - TRIACs and Transistors - IGBTs - Arrays ...
Avantaj konpetitif:
We specialize in Nexperia USA Inc. PMPB20XPE,115 electronic components. PMPB20XPE,115 can be shipped within 24 hours after order. If you have any demands for PMPB20XPE,115, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PMPB20XPE,115 Atribi pwodwi yo

Nimewo Pati : PMPB20XPE,115
Manifakti : Nexperia USA Inc.
Deskripsyon : MOSFET P-CH 20V 7.2A SOT1220
Seri : -
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 7.2A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 4.5V
RD sou (Max) @ Id, Vgs : 23.5 mOhm @ 7.2A, 4.5V
Vgs (th) (Max) @ Id : 900mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 45nC @ 4.5V
Vgs (Max) : ±12V
Antre kapasite (Ciss) (Max) @ Vds : 294pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1.7W (Ta), 12.5W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : DFN2020MD-6
Pake / Ka : 6-UDFN Exposed Pad

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