IXYS - IXFX44N80Q3

KEY Part #: K6394908

IXFX44N80Q3 Pricing (USD) [3757PC Stock]

  • 1 pcs$13.32649
  • 60 pcs$13.26019

Nimewo Pati:
IXFX44N80Q3
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 800V 44A PLUS247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Diodes - RF, Transistors - Objektif espesyal, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - SCR, Transistors - FETs, MOSFETs - Arrays, Tiristors - TRIACs and Transistors - IGBTs - Arrays ...
Avantaj konpetitif:
We specialize in IXYS IXFX44N80Q3 electronic components. IXFX44N80Q3 can be shipped within 24 hours after order. If you have any demands for IXFX44N80Q3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFX44N80Q3 Atribi pwodwi yo

Nimewo Pati : IXFX44N80Q3
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 800V 44A PLUS247
Seri : HiPerFET™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 44A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 190 mOhm @ 22A, 10V
Vgs (th) (Max) @ Id : 6.5V @ 8mA
Chaje Gate (Qg) (Max) @ Vgs : 185nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 9840pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1250W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PLUS247™-3
Pake / Ka : TO-247-3