DMT6007LFG-13 Pricing (USD) [181579PC Stock]
- 1 pcs$0.20370
- 3,000 pcs$0.18028
- Nimewo Pati:
- DMT6007LFG-13
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET BVDSS 41V 60V POWERDI333.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Modil pouvwa chofè, Tiristors - SCR, Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - RF, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Diodes - Varyab kapasite (Varicaps, Varactors) ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMT6007LFG-13 electronic components. DMT6007LFG-13 can be shipped within 24 hours after order. If you have any demands for DMT6007LFG-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMT6007LFG-13 Atribi pwodwi yo
Nimewo Pati :
DMT6007LFG-13
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET BVDSS 41V 60V POWERDI333
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
15A (Ta), 80A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
6 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
41.3nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
2090pF @ 30V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2.2W (Ta), 62.5W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PowerDI3333-8
Pake / Ka :
8-PowerWDFN
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