PMZB600UNEYL Pricing (USD) [1368472PC Stock]
- 1 pcs$0.04089
- 10,000 pcs$0.04069
- Nimewo Pati:
- PMZB600UNEYL
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 20V 3QFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Diodes - Rèkteur - Arrays, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR - Modil yo, Transistors - IGBTs - Arrays, Tiristors - DIACs, SIDACs and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PMZB600UNEYL electronic components. PMZB600UNEYL can be shipped within 24 hours after order. If you have any demands for PMZB600UNEYL, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMZB600UNEYL Atribi pwodwi yo
Nimewo Pati :
PMZB600UNEYL
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET N-CH 20V 3QFN
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
600mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.2V, 4.5V
RD sou (Max) @ Id, Vgs :
620 mOhm @ 600mA, 4.5V
Vgs (th) (Max) @ Id :
950mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
0.7nC @ 4.5V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
21.3pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
360mW (Ta), 2.7W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DFN1006B-3
Pake / Ka :
3-XFDFN
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