STI360N4F6 Pricing (USD) [12433PC Stock]
- 1 pcs$2.52962
- 10 pcs$2.26035
- 100 pcs$1.85341
- 500 pcs$1.50080
- 1,000 pcs$1.26573
- Nimewo Pati:
- STI360N4F6
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- MOSFET N-CH 40V 120A I2PAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Single, Tiristors - SCR, Transistors - IGBTs - Single, Diodes - RF, Modil pouvwa chofè, Transistors - Objektif espesyal and Diodes - Rèkteur - Single ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STI360N4F6 electronic components. STI360N4F6 can be shipped within 24 hours after order. If you have any demands for STI360N4F6, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STI360N4F6 Atribi pwodwi yo
Nimewo Pati :
STI360N4F6
Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET N-CH 40V 120A I2PAK
Seri :
Automotive, AEC-Q101, DeepGATE™, STripFET™ VI
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
120A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
1.8 mOhm @ 60A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
340nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
17930pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
300W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
I2PAK (TO-262)
Pake / Ka :
TO-262-3 Long Leads, I²Pak, TO-262AA
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