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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Arrays
  5. EPC2102ENG

EPC - EPC2102ENG

KEY Part #: K6523726

[4069PC Stock]

    Nimewo Pati:
    EPC2102ENG
    Manifakti:
    EPC
    Detaye deskripsyon:
    GAN TRANS 2N-CH 60V BUMPED DIE.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Arrays, Transistors - Pwogramasyon Unijunction, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays and Transistors - JFETs ...
    Avantaj konpetitif:
    We specialize in EPC EPC2102ENG electronic components. EPC2102ENG can be shipped within 24 hours after order. If you have any demands for EPC2102ENG, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    EPC2102ENG Atribi pwodwi yo

    Nimewo Pati : EPC2102ENG
    Manifakti : EPC
    Deskripsyon : GAN TRANS 2N-CH 60V BUMPED DIE
    Seri : eGaN®
    Estati Pati : Discontinued at Digi-Key
    FET Kalite : 2 N-Channel (Half Bridge)
    Karakteristik FET : GaNFET (Gallium Nitride)
    Drenaj nan Voltage Sous (Vdss) : 60V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 23A
    RD sou (Max) @ Id, Vgs : 4.4 mOhm @ 20A, 5V
    Vgs (th) (Max) @ Id : 2.5V @ 7mA
    Chaje Gate (Qg) (Max) @ Vgs : 6.8nC @ 5V
    Antre kapasite (Ciss) (Max) @ Vds : 830pF @ 30V
    Pouvwa - Max : -
    Operating Tanperati : -40°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake / Ka : Die
    Pake Aparèy Founisè : Die
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