IXYA8N90C3D1 Pricing (USD) [26928PC Stock]
- 1 pcs$1.61137
- 50 pcs$1.60335
- Nimewo Pati:
- IXYA8N90C3D1
- Manifakti:
- IXYS
- Detaye deskripsyon:
- IGBT 900V 20A 125W C3 TO-263AA.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - JFETs, Transistors - Objektif espesyal, Transistors - IGBTs - Arrays, Diodes - RF, Tiristors - SCR - Modil yo and Diodes - Zener - Single ...
- Avantaj konpetitif:
- We specialize in IXYS IXYA8N90C3D1 electronic components. IXYA8N90C3D1 can be shipped within 24 hours after order. If you have any demands for IXYA8N90C3D1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXYA8N90C3D1 Atribi pwodwi yo
Nimewo Pati :
IXYA8N90C3D1
Manifakti :
IXYS
Deskripsyon :
IGBT 900V 20A 125W C3 TO-263AA
Seri :
GenX3™, XPT™
Estati Pati :
Active
Kalite IGBT :
-
Voltage - Pèseptè ki emèt deba (Max) :
900V
Kouran - Pèseptè (Ic) (Max) :
20A
Kouran - Pèseptè batman (Icm) :
48A
Vce (sou) (Max) @ Vge, Ic :
2.5V @ 15V, 8A
Pouvwa - Max :
125W
Oblije chanje enèji :
460µJ (on), 180µJ (off)
Kalite Antre :
Standard
Gate chaje :
13.3nC
Td (on / off) @ 25 ° C :
16ns/40ns
Kondisyon egzamen an :
450V, 8A, 30 Ohm, 15V
Ranvèse Tan Reverse (trr) :
114ns
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè :
TO-263AA
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