Vishay Semiconductor Diodes Division - LL4148-GS18

KEY Part #: K6458682

LL4148-GS18 Pricing (USD) [4413469PC Stock]

  • 1 pcs$0.00838
  • 10,000 pcs$0.00789
  • 30,000 pcs$0.00710
  • 50,000 pcs$0.00631
  • 100,000 pcs$0.00592
  • 250,000 pcs$0.00526

Nimewo Pati:
LL4148-GS18
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 75V 300MA SOD80. Diodes - General Purpose, Power, Switching 100 Volt 50 mA
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays, Modil pouvwa chofè and Diodes - Rèkteur - Single ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division LL4148-GS18 electronic components. LL4148-GS18 can be shipped within 24 hours after order. If you have any demands for LL4148-GS18, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

LL4148-GS18 Atribi pwodwi yo

Nimewo Pati : LL4148-GS18
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 75V 300MA SOD80
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 75V
Kouran - Mwayèn Rèktifye (Io) : 300mA (DC)
Voltage - Forward (Vf) (Max) @ Si : 1V @ 50mA
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 4ns
Kouran - Fèy Reverse @ Vr : 5µA @ 75V
Kapasite @ Vr, F : 4pF @ 0V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-213AC, MINI-MELF, SOD-80
Pake Aparèy Founisè : SOD-80 MiniMELF
Operating Tanperati - Junction : -65°C ~ 175°C

Ou ka enterese tou
  • BAT54T

    ON Semiconductor

    DIODE SCHOTTKY 30V 200MA SOT523. Schottky Diodes & Rectifiers 0.2A,30V,Surf Mt SCHOTTKY Barr DIODE

  • BAS21E6433HTMA1

    Infineon Technologies

    DIODE GEN PURP 200V 250MA SOT23. Diodes - General Purpose, Power, Switching Silicon Switch Diode

  • BAS116E6433HTMA1

    Infineon Technologies

    DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode

  • BAR74E6327HTSA1

    Infineon Technologies

    DIODE GEN PURP 50V 250MA SOT23-3.

  • BAL99E6327HTSA1

    Infineon Technologies

    DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Tuning Diode

  • BAL99E6433HTMA1

    Infineon Technologies

    DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Tuning Diode