ON Semiconductor - FDS6912A

KEY Part #: K6522065

FDS6912A Pricing (USD) [333932PC Stock]

  • 1 pcs$0.11849
  • 2,500 pcs$0.11790

Nimewo Pati:
FDS6912A
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET 2N-CH 30V 6A 8SOIC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Pwogramasyon Unijunction, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - RF, Transistors - FETs, MOSFETs - RF and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDS6912A electronic components. FDS6912A can be shipped within 24 hours after order. If you have any demands for FDS6912A, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDS6912A Atribi pwodwi yo

Nimewo Pati : FDS6912A
Manifakti : ON Semiconductor
Deskripsyon : MOSFET 2N-CH 30V 6A 8SOIC
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6A
RD sou (Max) @ Id, Vgs : 28 mOhm @ 6A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 8.1nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds : 575pF @ 15V
Pouvwa - Max : 900mW
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè : 8-SOIC