TK9A55DA(STA4,Q,M) Pricing (USD) [57375PC Stock]
- 1 pcs$0.75340
- 50 pcs$0.74965
- Nimewo Pati:
- TK9A55DA(STA4,Q,M)
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET N-CH 550V 8.5A TO-220SIS.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Diodes - Zener - Arrays, Diodes - RF, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Single and Diodes - Varyab kapasite (Varicaps, Varactors) ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TK9A55DA(STA4,Q,M) electronic components. TK9A55DA(STA4,Q,M) can be shipped within 24 hours after order. If you have any demands for TK9A55DA(STA4,Q,M), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK9A55DA(STA4,Q,M) Atribi pwodwi yo
Nimewo Pati :
TK9A55DA(STA4,Q,M)
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N-CH 550V 8.5A TO-220SIS
Seri :
π-MOSVII
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
550V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
8.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
860 mOhm @ 4.3A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
20nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
1050pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
40W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220SIS
Pake / Ka :
TO-220-3 Full Pack
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