Manifakti :
ON Semiconductor
Deskripsyon :
FET ENGR DEV-NOT REL
FET Kalite :
2 N-Channel (Dual) Common Source
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
28A (Ta), 95A (Tc)
RD sou (Max) @ Id, Vgs :
2.12 mOhm @ 28A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
90nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
5035pF @ 15V
Pouvwa - Max :
2.1W (Ta), 29W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-PQFN (3.3x5)