Renesas Electronics America - 2SK4151TZ-E

KEY Part #: K6404115

[2124PC Stock]


    Nimewo Pati:
    2SK4151TZ-E
    Manifakti:
    Renesas Electronics America
    Detaye deskripsyon:
    MOSFET N-CH 150V 1A TO-92.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Modil yo, Tiristors - SCR, Modil pouvwa chofè, Transistors - IGBTs - Single, Tiristors - TRIACs and Transistors - Bipolè (BJT) - Single ...
    Avantaj konpetitif:
    We specialize in Renesas Electronics America 2SK4151TZ-E electronic components. 2SK4151TZ-E can be shipped within 24 hours after order. If you have any demands for 2SK4151TZ-E, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    2SK4151TZ-E Atribi pwodwi yo

    Nimewo Pati : 2SK4151TZ-E
    Manifakti : Renesas Electronics America
    Deskripsyon : MOSFET N-CH 150V 1A TO-92
    Seri : -
    Estati Pati : Last Time Buy
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 150V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1A (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4V
    RD sou (Max) @ Id, Vgs : 1.95 Ohm @ 500mA, 4V
    Vgs (th) (Max) @ Id : -
    Chaje Gate (Qg) (Max) @ Vgs : 3.5nC @ 4V
    Vgs (Max) : ±10V
    Antre kapasite (Ciss) (Max) @ Vds : 98pF @ 10V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 750mW (Ta)
    Operating Tanperati : 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : TO-92
    Pake / Ka : TO-226-3, TO-92-3 (TO-226AA)