[3443PC Stock]
- Nimewo Pati:
- BST72A,112
- Manifakti:
- NXP USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 100V 190MA SOT54.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Tiristors - SCR, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Objektif espesyal, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Diodes - Zener - Single ...
- Avantaj konpetitif:
- We specialize in NXP USA Inc. BST72A,112 electronic components. BST72A,112 can be shipped within 24 hours after order. If you have any demands for BST72A,112, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BST72A,112 Atribi pwodwi yo
Nimewo Pati :
BST72A,112
Manifakti :
NXP USA Inc.
Deskripsyon :
MOSFET N-CH 100V 190MA SOT54
Seri :
TrenchMOS™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
190mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
5V
RD sou (Max) @ Id, Vgs :
10 Ohm @ 150mA, 5V
Vgs (th) (Max) @ Id :
3.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
-
Vgs (Max) :
20V
Antre kapasite (Ciss) (Max) @ Vds :
40pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
830mW (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-92-3
Pake / Ka :
TO-226-3, TO-92-3 (TO-226AA)
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