Nimewo Pati :
TK40P03M1(T6RDS-Q)
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N-CH 30V 40A DPAK-3
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
40A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
10.8 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.3V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
17.5nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
1150pF @ 10V
Disipasyon Pouvwa (Max) :
-
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DPAK
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63