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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Arrays
  5. FDS3890

ON Semiconductor - FDS3890

KEY Part #: K6522116

FDS3890 Pricing (USD) [123616PC Stock]

  • 1 pcs$0.30817
  • 2,500 pcs$0.30664
Nimewo Pati:
FDS3890
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET 2N-CH 80V 4.7A 8-SO.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors) and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDS3890 electronic components. FDS3890 can be shipped within 24 hours after order. If you have any demands for FDS3890, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDS3890 Atribi pwodwi yo

Nimewo Pati : FDS3890
Manifakti : ON Semiconductor
Deskripsyon : MOSFET 2N-CH 80V 4.7A 8-SO
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 80V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4.7A
RD sou (Max) @ Id, Vgs : 44 mOhm @ 4.7A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 35nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 1180pF @ 40V
Pouvwa - Max : 900mW
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè : 8-SOIC

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