IPB80P04P4L08ATMA1 Pricing (USD) [121996PC Stock]
- 1 pcs$0.30319
- 1,000 pcs$0.27819
- Nimewo Pati:
- IPB80P04P4L08ATMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET P-CH TO263-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Arrays, Modil pouvwa chofè, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Single and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IPB80P04P4L08ATMA1 electronic components. IPB80P04P4L08ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB80P04P4L08ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB80P04P4L08ATMA1 Atribi pwodwi yo
Nimewo Pati :
IPB80P04P4L08ATMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET P-CH TO263-3
Seri :
Automotive, AEC-Q101, OptiMOS™
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
80A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
7.9 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 120µA
Chaje Gate (Qg) (Max) @ Vgs :
92nC @ 10V
Vgs (Max) :
±16V
Antre kapasite (Ciss) (Max) @ Vds :
5430pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
75W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-TO263-3-2
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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