DMN4060SVT-7 Pricing (USD) [672621PC Stock]
- 1 pcs$0.05499
- 3,000 pcs$0.04953
- Nimewo Pati:
- DMN4060SVT-7
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET N-CH 45V 4.8A TSOT26.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Diodes - RF, Transistors - IGBTs - Arrays, Transistors - JFETs, Transistors - IGBTs - Modil yo, Transistors - Objektif espesyal, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMN4060SVT-7 electronic components. DMN4060SVT-7 can be shipped within 24 hours after order. If you have any demands for DMN4060SVT-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN4060SVT-7 Atribi pwodwi yo
Nimewo Pati :
DMN4060SVT-7
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N-CH 45V 4.8A TSOT26
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
45V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4.8A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
46 mOhm @ 4.3A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
22.4nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1287pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.2W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TSOT-26
Pake / Ka :
SOT-23-6 Thin, TSOT-23-6
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