SI1926DL-T1-GE3 Pricing (USD) [575693PC Stock]
- 1 pcs$0.06425
- 3,000 pcs$0.06069
- Nimewo Pati:
- SI1926DL-T1-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET 2N-CH 60V 0.37A SOT363.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Modil pouvwa chofè, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - Bipolè (BJT) - Arrays ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SI1926DL-T1-GE3 electronic components. SI1926DL-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI1926DL-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI1926DL-T1-GE3 Atribi pwodwi yo
Nimewo Pati :
SI1926DL-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET 2N-CH 60V 0.37A SOT363
Seri :
TrenchFET®
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
370mA
RD sou (Max) @ Id, Vgs :
1.4 Ohm @ 340mA, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
1.4nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
18.5pF @ 30V
Pouvwa - Max :
510mW
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
6-TSSOP, SC-88, SOT-363
Pake Aparèy Founisè :
SC-70-6 (SOT-363)
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