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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. PSMN2R1-40PLQ

Nexperia USA Inc. - PSMN2R1-40PLQ

KEY Part #: K6419267

PSMN2R1-40PLQ Pricing (USD) [100614PC Stock]

  • 1 pcs$0.42061
  • 5,000 pcs$0.41852
Nimewo Pati:
PSMN2R1-40PLQ
Manifakti:
Nexperia USA Inc.
Detaye deskripsyon:
MOSFET N-CH 40V 150A TO-220.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Single, Tiristors - SCR, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - FETs, MOSFETs - Single ...
Avantaj konpetitif:
We specialize in Nexperia USA Inc. PSMN2R1-40PLQ electronic components. PSMN2R1-40PLQ can be shipped within 24 hours after order. If you have any demands for PSMN2R1-40PLQ, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PSMN2R1-40PLQ Atribi pwodwi yo

Nimewo Pati : PSMN2R1-40PLQ
Manifakti : Nexperia USA Inc.
Deskripsyon : MOSFET N-CH 40V 150A TO-220
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 150A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 2.2 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id : 2.1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 87.8nC @ 5V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 9584pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 293W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220AB
Pake / Ka : TO-220-3

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