[1354PC Stock]
- Nimewo Pati:
- IRLHM630TR2PBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 30V 21A PQFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Arrays, Diodes - Zener - Single, Modil pouvwa chofè, Transistors - Bipolè (BJT) - RF and Tiristors - SCR - Modil yo ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRLHM630TR2PBF electronic components. IRLHM630TR2PBF can be shipped within 24 hours after order. If you have any demands for IRLHM630TR2PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRLHM630TR2PBF Atribi pwodwi yo
Nimewo Pati :
IRLHM630TR2PBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 30V 21A PQFN
Seri :
HEXFET®
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
21A (Ta), 40A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 10V
RD sou (Max) @ Id, Vgs :
3.5 mOhm @ 20A, 4.5V
Vgs (th) (Max) @ Id :
1.1V @ 50µA
Chaje Gate (Qg) (Max) @ Vgs :
62nC @ 4.5V
Vgs (Max) :
±12V
Antre kapasite (Ciss) (Max) @ Vds :
3170pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2.7W (Ta), 37W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PQFN (3x3)
Pake / Ka :
8-VQFN Exposed Pad
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