FQB8N90CTM Pricing (USD) [59774PC Stock]
- 1 pcs$0.65414
- 800 pcs$0.63510
- Nimewo Pati:
- FQB8N90CTM
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 900V 6.3A D2PAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Tiristors - SCR, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - JFETs, Transistors - IGBTs - Arrays and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor FQB8N90CTM electronic components. FQB8N90CTM can be shipped within 24 hours after order. If you have any demands for FQB8N90CTM, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQB8N90CTM Atribi pwodwi yo
Nimewo Pati :
FQB8N90CTM
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CH 900V 6.3A D2PAK
Seri :
QFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
900V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6.3A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
1.9 Ohm @ 3.15A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
45nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
2080pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
171W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D²PAK (TO-263AB)
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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