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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FDS3512

ON Semiconductor - FDS3512

KEY Part #: K6392822

FDS3512 Pricing (USD) [93051PC Stock]

  • 1 pcs$0.42231
  • 2,500 pcs$0.42021
Nimewo Pati:
FDS3512
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 80V 4A 8SOIC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Modil pouvwa chofè, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Single, Transistors - IGBTs - Arrays, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Arrays and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDS3512 electronic components. FDS3512 can be shipped within 24 hours after order. If you have any demands for FDS3512, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDS3512 Atribi pwodwi yo

Nimewo Pati : FDS3512
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 80V 4A 8SOIC
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 80V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V
RD sou (Max) @ Id, Vgs : 70 mOhm @ 4A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 18nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 634pF @ 40V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.5W (Ta)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-SOIC
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)

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