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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. NTP6412ANG

ON Semiconductor - NTP6412ANG

KEY Part #: K6398449

NTP6412ANG Pricing (USD) [46069PC Stock]

  • 1 pcs$0.80693
  • 10 pcs$0.72875
  • 100 pcs$0.58572
  • 500 pcs$0.45555
  • 1,000 pcs$0.37745
Nimewo Pati:
NTP6412ANG
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 100V 58A TO-220AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - Pwogramasyon Unijunction, Tiristors - SCR - Modil yo, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - RF, Diodes - RF, Transistors - IGBTs - Arrays and Transistors - FETs, MOSFETs - Arrays ...
Avantaj konpetitif:
We specialize in ON Semiconductor NTP6412ANG electronic components. NTP6412ANG can be shipped within 24 hours after order. If you have any demands for NTP6412ANG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NTP6412ANG Atribi pwodwi yo

Nimewo Pati : NTP6412ANG
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 100V 58A TO-220AB
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 58A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 18.2 mOhm @ 58A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 100nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 3500pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 167W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220AB
Pake / Ka : TO-220-3

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