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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. GA50JT17-247

GeneSiC Semiconductor - GA50JT17-247

KEY Part #: K6412450

GA50JT17-247 Pricing (USD) [13441PC Stock]

  • 90 pcs$98.85087
Nimewo Pati:
GA50JT17-247
Manifakti:
GeneSiC Semiconductor
Detaye deskripsyon:
TRANS SJT 1.7KV 100A.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Tiristors - SCR, Diodes - Zener - Arrays, Diodes - RF, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - RF, Tiristors - TRIACs and Tiristors - SCR - Modil yo ...
Avantaj konpetitif:
We specialize in GeneSiC Semiconductor GA50JT17-247 electronic components. GA50JT17-247 can be shipped within 24 hours after order. If you have any demands for GA50JT17-247, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GA50JT17-247 Atribi pwodwi yo

Nimewo Pati : GA50JT17-247
Manifakti : GeneSiC Semiconductor
Deskripsyon : TRANS SJT 1.7KV 100A
Seri : -
Estati Pati : Obsolete
FET Kalite : -
Teknoloji : SiC (Silicon Carbide Junction Transistor)
Drenaj nan Voltage Sous (Vdss) : 1700V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 100A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : -
RD sou (Max) @ Id, Vgs : 25 mOhm @ 50A
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Antre kapasite (Ciss) (Max) @ Vds : -
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 583W (Tc)
Operating Tanperati : 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-247
Pake / Ka : TO-247-3
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