[3869PC Stock]
- Nimewo Pati:
- APTM100A23SCTG
- Manifakti:
- Microsemi Corporation
- Detaye deskripsyon:
- MOSFET 2N-CH 1000V 36A SP4.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Arrays, Transistors - Objektif espesyal, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - Arrays and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Microsemi Corporation APTM100A23SCTG electronic components. APTM100A23SCTG can be shipped within 24 hours after order. If you have any demands for APTM100A23SCTG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APTM100A23SCTG Atribi pwodwi yo
Nimewo Pati :
APTM100A23SCTG
Manifakti :
Microsemi Corporation
Deskripsyon :
MOSFET 2N-CH 1000V 36A SP4
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
2 N-Channel (Half Bridge)
Karakteristik FET :
Silicon Carbide (SiC)
Drenaj nan Voltage Sous (Vdss) :
1000V (1kV)
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
36A
RD sou (Max) @ Id, Vgs :
270 mOhm @ 18A, 10V
Vgs (th) (Max) @ Id :
5V @ 5mA
Chaje Gate (Qg) (Max) @ Vgs :
308nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
8700pF @ 25V
Pouvwa - Max :
694W
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake / Ka :
SP4
Pake Aparèy Founisè :
SP4
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