[3951PC Stock]
- Nimewo Pati:
- SI5980DU-T1-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET 2N-CH 100V 2.5A CHIPFET.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Tiristors - SCR - Modil yo, Tiristors - SCR, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Single, Diodes - RF, Tiristors - DIACs, SIDACs and Diodes - Zener - Arrays ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SI5980DU-T1-GE3 electronic components. SI5980DU-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI5980DU-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI5980DU-T1-GE3 Atribi pwodwi yo
Nimewo Pati :
SI5980DU-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET 2N-CH 100V 2.5A CHIPFET
Seri :
TrenchFET®
Estati Pati :
Obsolete
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.5A
RD sou (Max) @ Id, Vgs :
567 mOhm @ 400mA, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
3.3nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
78pF @ 50V
Pouvwa - Max :
7.8W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
PowerPAK® ChipFET™ Dual
Pake Aparèy Founisè :
PowerPAK® ChipFet Dual
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