Nimewo Pati :
APTC90HM60T3G
Manifakti :
Microsemi Corporation
Deskripsyon :
MOSFET 4N-CH 900V 59A SP3
FET Kalite :
4 N-Channel (H-Bridge)
Karakteristik FET :
Super Junction
Drenaj nan Voltage Sous (Vdss) :
900V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
59A
RD sou (Max) @ Id, Vgs :
60 mOhm @ 52A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 6mA
Chaje Gate (Qg) (Max) @ Vgs :
540nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
13600pF @ 100V
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
SP3