Vishay Siliconix - IRLD014PBF

KEY Part #: K6400521

IRLD014PBF Pricing (USD) [83500PC Stock]

  • 1 pcs$0.42228
  • 10 pcs$0.37504
  • 100 pcs$0.28033
  • 500 pcs$0.21740
  • 1,000 pcs$0.17163

Nimewo Pati:
IRLD014PBF
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CH 60V 1.7A 4-DIP.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Arrays, Transistors - JFETs, Transistors - Objektif espesyal, Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Arrays, Diodes - Zener - Arrays and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
We specialize in Vishay Siliconix IRLD014PBF electronic components. IRLD014PBF can be shipped within 24 hours after order. If you have any demands for IRLD014PBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRLD014PBF Atribi pwodwi yo

Nimewo Pati : IRLD014PBF
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CH 60V 1.7A 4-DIP
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.7A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4V, 5V
RD sou (Max) @ Id, Vgs : 200 mOhm @ 1A, 5V
Vgs (th) (Max) @ Id : 2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 8.4nC @ 5V
Vgs (Max) : ±10V
Antre kapasite (Ciss) (Max) @ Vds : 400pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1.3W (Ta)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : 4-DIP, Hexdip, HVMDIP
Pake / Ka : 4-DIP (0.300", 7.62mm)