Infineon Technologies - BSL373SNH6327XTSA1

KEY Part #: K6421015

BSL373SNH6327XTSA1 Pricing (USD) [326107PC Stock]

  • 1 pcs$0.11342
  • 3,000 pcs$0.10888

Nimewo Pati:
BSL373SNH6327XTSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 100V 2A 6TSOP.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Arrays, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Single, Transistors - Objektif espesyal, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Arrays and Diodes - Zener - Single ...
Avantaj konpetitif:
We specialize in Infineon Technologies BSL373SNH6327XTSA1 electronic components. BSL373SNH6327XTSA1 can be shipped within 24 hours after order. If you have any demands for BSL373SNH6327XTSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSL373SNH6327XTSA1 Atribi pwodwi yo

Nimewo Pati : BSL373SNH6327XTSA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 100V 2A 6TSOP
Seri : OptiMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 230 mOhm @ 2A, 10V
Vgs (th) (Max) @ Id : 4V @ 218µA
Chaje Gate (Qg) (Max) @ Vgs : 9.3nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 265pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PG-TSOP-6-6
Pake / Ka : SOT-23-6 Thin, TSOT-23-6