[3125PC Stock]
- Nimewo Pati:
- PMCM650VNE/S500Z
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 12V 8.4A 6WLCSP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors) and Transistors - Bipolè (BJT) - Arrays ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PMCM650VNE/S500Z electronic components. PMCM650VNE/S500Z can be shipped within 24 hours after order. If you have any demands for PMCM650VNE/S500Z, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMCM650VNE/S500Z Atribi pwodwi yo
Nimewo Pati :
PMCM650VNE/S500Z
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET N-CH 12V 8.4A 6WLCSP
Seri :
TrenchMOS™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
8.4A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.5V, 4.5V
RD sou (Max) @ Id, Vgs :
25 mOhm @ 3A, 4.5V
Vgs (th) (Max) @ Id :
900mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
15.4nC @ 4.5V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
1060pF @ 6V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
12.5W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
6-WLCSP (1.48x.98)
Pake / Ka :
6-XFBGA, WLCSP
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