[1492PC Stock]
- Nimewo Pati:
- SQD35N05-26L-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 55V 30A TO252.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Tiristors - SCR - Modil yo, Diodes - Bridge rèktifikateur, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays and Transistors - IGBTs - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SQD35N05-26L-GE3 electronic components. SQD35N05-26L-GE3 can be shipped within 24 hours after order. If you have any demands for SQD35N05-26L-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQD35N05-26L-GE3 Atribi pwodwi yo
Nimewo Pati :
SQD35N05-26L-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 55V 30A TO252
Seri :
TrenchFET®
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
55V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
30A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
20 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
18nC @ 5V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1175pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
50W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-252, (D-Pak)
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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