IRLML2502TRPBF Pricing (USD) [606179PC Stock]
- 1 pcs$0.06102
- 3,000 pcs$0.04542
- Nimewo Pati:
- IRLML2502TRPBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 20V 4.2A SOT-23.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - JFETs, Diodes - Rèkteur - Single, Transistors - IGBTs - Modil yo, Modil pouvwa chofè, Tiristors - TRIACs, Transistors - IGBTs - Arrays and Tiristors - DIACs, SIDACs ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRLML2502TRPBF electronic components. IRLML2502TRPBF can be shipped within 24 hours after order. If you have any demands for IRLML2502TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRLML2502TRPBF Atribi pwodwi yo
Nimewo Pati :
IRLML2502TRPBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 20V 4.2A SOT-23
Seri :
HEXFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4.2A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
45 mOhm @ 4.2A, 4.5V
Vgs (th) (Max) @ Id :
1.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
12nC @ 5V
Vgs (Max) :
±12V
Antre kapasite (Ciss) (Max) @ Vds :
740pF @ 15V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.25W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
Micro3™/SOT-23
Pake / Ka :
TO-236-3, SC-59, SOT-23-3
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