Nimewo Pati :
SI1905BDH-T1-E3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET 2P-CH 8V 0.63A SC70-6
FET Kalite :
2 P-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
8V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
630mA
RD sou (Max) @ Id, Vgs :
542 mOhm @ 580mA, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
1.5nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
62pF @ 4V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
6-TSSOP, SC-88, SOT-363
Pake Aparèy Founisè :
SC-70-6 (SOT-363)