[4152PC Stock]
- Nimewo Pati:
- SI1903DL-T1-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET 2P-CH 20V 0.41A SC70-6.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Tranzistò - Bipolè (BJT) - Single, Pre-partial and Diodes - RF ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SI1903DL-T1-GE3 electronic components. SI1903DL-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI1903DL-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI1903DL-T1-GE3 Atribi pwodwi yo
Nimewo Pati :
SI1903DL-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET 2P-CH 20V 0.41A SC70-6
Seri :
TrenchFET®
Estati Pati :
Obsolete
FET Kalite :
2 P-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
410mA
RD sou (Max) @ Id, Vgs :
995 mOhm @ 410mA, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
1.8nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
-
Pouvwa - Max :
270mW
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
6-TSSOP, SC-88, SOT-363
Pake Aparèy Founisè :
SC-70-6 (SOT-363)
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