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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FDMS86263P

ON Semiconductor - FDMS86263P

KEY Part #: K6395265

FDMS86263P Pricing (USD) [80739PC Stock]

  • 1 pcs$0.48671
  • 3,000 pcs$0.48429
Nimewo Pati:
FDMS86263P
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET P-CH 150V 22A POWER 56.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Diodes - Zener - Arrays, Diodes - Zener - Single, Transistors - IGBTs - Arrays, Transistors - IGBTs - Single, Transistors - Pwogramasyon Unijunction, Transistors - JFETs and Tiristors - SCR - Modil yo ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDMS86263P electronic components. FDMS86263P can be shipped within 24 hours after order. If you have any demands for FDMS86263P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDMS86263P Atribi pwodwi yo

Nimewo Pati : FDMS86263P
Manifakti : ON Semiconductor
Deskripsyon : MOSFET P-CH 150V 22A POWER 56
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 150V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4.4A (Ta), 22A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V
RD sou (Max) @ Id, Vgs : 53 mOhm @ 4.4A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 63nC @ 10V
Vgs (Max) : ±25V
Antre kapasite (Ciss) (Max) @ Vds : 3905pF @ 75V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.5W (Ta), 104W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-PQFN (5x6)
Pake / Ka : 8-PowerTDFN

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